Congratulations to Jingyang for passing his “A” exam this month (Dec. ‘16). Jingyang discussed his ab initio studies of dopant formation energies of Si dopants in InGaAs, including accurate GW calculations of the band gap that were close to experimental values. Jingyang also described his future work on metal/InGaAs interfaces to his committee consisting of Profs. Thompson (MSE), Fennie (AEP) and DiSalvo (Chem.).