Electronic Materials Processing

III-V Materials


cheng_wei_gallium-arsenide
Indium Gallium Arsenide is a ternary alloy being investigated for for its utility in MOSFETs.  In particular we are looking at dopant activation properties. Shown above is gallium arsenide, a sample III-V material.
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Low-k Materials


alex_pic4_AMR_SiCOH_Pic
As semiconductors and electronic networks become smaller, crosstalk between circuits becomes an increasing concern. Low-k materials that insulate electrical conductance while also retaining structural integrity are are of great interest.  SiCOH materials are currently being investigated to address this.
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Nanoribbon Materials


jonathan_pic3_BilayerGraphene2
Synthetic graphene nanoribbons (GNRs) are graphene sheets with widths of only nanometers that are fabricated through synthetic chemistry techniques. These materials have a bandgap comparable to typical semiconductors such as Si, making them suitable for logic and photovoltaic applications. In addition, the GNRs can be functionalized along the edges for a variety of purposes. We are using Molecular Dynamics (MD) to understand how functionalizing the edges effect the colloidal properties of the GNRs in solvent as well as their assembly properties on substrates.
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